BYW28-500 Datasheet | NXP Semiconductors

- Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability. handbook, halfpage BYW28 series The package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. DESCRIPTION Rugged glass SOD115 package, using a high temperature alloyed construction. k a MAM384 Fig.1 Simplified outline (SOD115) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYW28-500 BYW28-600 VR continuous reverse voltage BYW28-500 BYW28-600 IF(AV) average forward current Ttp = 85 °C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 60 °C; printed-circuit board mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 85 °C; see Fig.4 Tamb = 60 °C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 m H; Tj = Tj max prior to surge; inductive load switched off see Fig.7 - - - 500 600 4 V V A - - 500 600 V V CONDITIONS MIN. MAX. UNIT - 1.7 - - - 46 21 170 ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature - - 65 - 65 20 +175 +175 m J °C °C 1997 Nov 26 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYW28-500 BYW28-600 IR reverse current VR = VRRMmax; see Fig.9 VR = VRRMmax; Tj = 165 °C; see Fig.9 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.12 f = 1 MHz; VR = 0; see Fig.10 when switched from IF = 1 A to VR ≥ 30 V and d IF/dt = - 1 A/µs; see Fig.13 CONDITIONS IF = 3.5 A; Tj = Tj...