BYW29F-200 Datasheet | NXP Semiconductors

DESCRIPTION Glass passivated high efficiency rectifier diodes in full pack, plastic envelopes, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYW29F series QUICK REFERENCE DATA SYMBOL VRRM VF IF(AV) trr PARAMETER BYW29FRepetitive peak reverse voltage Forward voltage Forward current Reverse recovery time MAX. 100 100 0.895 8 25 MAX. 150 150 0.895 8 25 MAX. 200 200 0.895 8 25 UNIT V V A ns PINNING - SOD100 PIN 1 2 DESCRIPTION cathode anode PIN CONFIGURATION case SYMBOL a k case isolated 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Average forward current2 square wave; δ = 0.5; Ths ≤ 106 ˚C sinusoidal; a = 1.57; Ths ≤ 109 ˚C CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 8 7.3 11.3 16 80 88 32 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s ˚C ˚C IF(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Ths ≤ 109 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature 1 Ths ≤ 141˚C for thermal stability. 2 Neglecting switching and reverse current losses October 1994 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast ISOLATION Ths = 25 ˚C unless otherwise specified SYMBOL Visol Cisol PARAMETER Repetitive peak voltage from both terminals to external heatsink Capacitance from cathode to external heatsink CONDITIONS R.H. ≤ 65% ; clean and dustfree f = 1 MHz MIN. - BYW29F series TYP. 12 MAX. 1500 - UNIT V p F THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal...