BYW96D Datasheet | NXP Semiconductors

- Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack - Also available with preformed leads for easy insertion. DESCRIPTION BYW96 series construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Rugged glass SOD64 package, using a high temperature alloyed 2/3 page k (Datasheet) Fig.1 Simplified outline (SOD64) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYW96D BYW96E VR continuous reverse voltage BYW96D BYW96E IF(AV) average forward current PARAMETER repetitive peak reverse voltage , a MAM104 CONDITIONS MIN. - - - - MAX. 800 1000 800 1000 3 V V V V A UNIT Ttp = 50 °C; lead length = 10 mm see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 55 °C; PCB mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 Ttp = 50 °C; see Fig.4 Tamb = 55 °C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 m H; Tj = Tj max prior to surge; inductive load switched off see Fig.7 - IF(AV) average forward current - 1.25 IFRM IFSM repetitive peak forward current non-repetitive peak forward current - - - 30 13 70 ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature - - 65 -...