BYX90G Datasheet | NXP Semiconductors

- Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Soft-recovery switching characteristics - Guaranteed avalanche energy absorption capability. APPLICATIONS - High-voltage rectification at high frequencies - Sub-ponent for very high voltage rectifiers, for example, in X-ray and radar equipment. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. handbook, halfpage The cathode is marked by a black band on the body. Fig.1 Simplified outline (SOD83A) and symbol. k a MSA480 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM IF(AV) PARAMETER repetitive peak reverse voltage crest working reverse voltage average forward current averaged over any 20 ms period; Toil = 45 °C; see Fig.2; see also Fig.3 t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRWMmax; see Fig.4 t = 10 µs; triangular pulse; Tj = Tj max prior to surge CONDITIONS MIN. - - - MAX. 7.5 6 550 UNIT k V k V m A IFRM IFSM repetitive peak forward current non-repetitive peak forward current - - 5 20 PRSM Tstg Tj non-repetitive peak reverse power dissipation storage temperature junction temperature - - 65 - 65 5 +165 +165 k W °C °C 1996 Sep 26 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifier ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R IR trr PARAMETER forward voltage reverse avalanche breakdown voltage reverse current reverse recovery time IR = 0.1 m A VR = VRWMmax; Tj = Tj max when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.7 CONDITIONS IF = 2 A; see Fig.5 MIN. -...