BZB784-C12 Datasheet | NXP Semiconductors

URES - Total power dissipation: max. 350 m W - Approx. 5% VZ tolerance - Working voltage range: nom. 2.4 to 15 V (E24 range). APPLICATIONS - General regulation functions - ESD and surge protection. DESCRIPTION handbook, halfpage BZB784 series PINNING SOT323 (SC-70) PIN 1 2 3 DESCRIPTION cathode cathode mon anode 3 1 2 Low-power voltage regulator diodes in a small SOT323 (SC-70) package. 1 Top view 2 MAM407 Fig.1 Simplified outline and symbol. MARKING TYPE NUMBER BZB784-C2V4 BZB784-C2V7 BZB784-C3V0 BZB784-C3V3 BZB784-C3V6 MARKING CODE 91 92 93 94 95 TYPE NUMBER BZB784-C3V9 BZB784-C4V3 BZB784-C4V7 BZB784-C5V1 BZB784-C5V6 MARKING CODE 96 97 98 99 9A TYPE NUMBER BZB784-C6V2 BZB784-C6V8 BZB784-C7V5 BZB784-C8V2 BZB784-C9V1 MARKING CODE 9B 9C 9D 9E 9F TYPE NUMBER BZB784-C10 BZB784-C11 BZB784-C12 BZB784-C13 BZB784-C15 MARKING CODE 9G 9H 9J 9K 9L LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation; note 1 non-repetitive peak reverse dissipation storage temperature junction temperature tp = 100 µs; square wave; Tamb = 25 °C; prior to surge Tamb = 25 °C; 2 diodes loaded Tamb = 25 °C; 1 diode loaded tp = 100 µs; square wave; Tamb = 25 °C; prior to surge CONDITIONS - MIN. see Table 1 - - - - 65 - 350 180 40 +150 150 m W m W W °C °C MAX. 200 UNIT m A 2001 Feb 27 Philips Semiconductors Product specification Voltage regulator double diodes THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a PARAMETER thermal resistance from junction to soldering point thermal resistance from junction to ambient CONDITIONS 2 diodes loaded; note 1 1 diode loaded; note 1 2 diodes loaded; note 2 1 diode loaded; note 2 Notes 1. Solder points on cathode tabs. 2. Device mounted on a FR4 printed-circuit board. ELECTRICAL CHARACTERISTICS Total BZB784-C series Tj = 25 °C; unless otherwise...