BZB984-C6V2 Datasheet | NXP Semiconductors

URES - Total power dissipation: max. 425 m W - Approx. 5% VZ tolerance - Ultra small flat plastic SMD package - Working voltage range nom. 2.4 to 15 V (E24 range). APPLICATIONS - General regulation functions - ESD and surge protection. handbook, halfpage BZB984 series PINNING PIN 1 2 3 DESCRIPTION cathode 1 cathode 2 mon anode 3 2 DESCRIPTION Low-power voltage regulator diodes in a SOT663 ultra small plastic SMD package. Fig.1 Top view MHC314 Simplified outline (SOT663) and symbol. MARKING TYPE NUMBER BZB984-C2V4 BZB984-C2V7 BZB984-C3V0 BZB984-C3V3 BZB984-C3V6 MARKING CODE 91 92 93 94 95 TYPE NUMBER BZB984-C3V9 BZB984-C4V3 BZB984-C4V7 BZB984-C5V1 BZB984-C5V6 MARKING CODE 96 97 98 99 9A TYPE NUMBER BZB984-C6V2 BZB984-C6V8 BZB984-C7V5 BZB984-C8V2 BZB984-C9V1 MARKING CODE 9B 9C 9D 9E 9F TYPE NUMBER BZB984-C10 BZB984-C11 BZB984-C12 BZB984-C13 BZB984-C15 MARKING CODE 9G 9H 9J 9K 9L LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse dissipation storage temperature junction temperature tp = 100 µs; square wave; Tamb = 25 °C; prior to surge Tamb = 25 °C; 2 diodes loaded; note 1 Tamb = 25 °C; 1 diode loaded; note 1 tp = 100 µs; square wave; Tamb = 25 °C; prior to surge CONDITIONS - MIN. MAX. 200 UNIT m A see Table 1 - - - - 65 - 425 265 40 +150 150 m W m W W °C °C 2002 Jun 21 Philips Semiconductors Product specification Voltage regulator double diodes ELECTRICAL CHARACTERISTICS Total BZB984-C series Tamb = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZB984-C2V4 BZB984-C2V7 BZB984-C3V0 BZB984-C3V3 BZB984-C3V6 BZB984-C3V9 BZB984-C4V3 BZB984-C4V7 BZB984-C5V1 BZB984-C5V6 BZB984-C6V2 BZB984-C6V8 BZB984-C7V5 BZB984-C8V2 BZB984-C9V1 BZB984-C10 BZB984-C11 BZB984-C12 BZB984-C13...