BZD142-120 Datasheet | NXP Semiconductors

URES - Zener and blocking function in one package - Glass passivated - Low leakage current - Excellent stability - Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass package through Implotec TM(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. BZD142 MGU216 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES SYMBOL Tstg Tj Zener Ptot total power dissipation Ttp = 25 °C; lead length 10 mm; see Fig.5 - 2.1 W PARAMETER storage temperature junction temperature CONDITIONS MIN. - 65 - 65 MAX. +150 +150 UNIT °C °C Blocking diode VR ERSM continuous reverse voltage non-repetitive peak reverse avalanche energy L = 120 m H; Tj = Tj(max) prior to surge; inductive load switched off - - 600 10 V m J 2000 Dec 19 Philips Semiconductors Preliminary specification Zen Block TM; zener with integrated blocking diode ELECTRICAL CHARACTERISTICS ZENER/TVS Tj = 25 °C unless otherwise specified. WORKING VOLTAGE TYPE NUMBER SUFFIX(1) TEMPERATURE COEFFICIENT SZ (%/K) at Itest MIN. 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 MAX. 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 10 10 10 5 5 5 5 5 5 5 TEST CURRENT CLAMPING VOLTAGE V(CL)R (V) MAX. 94.4 103.5 114 126 139 152 167 185 204 224 at IRSM (A) (note 2) 106 0.97 0.88 0.79 0.72 0.66 0.60 0.54 0.49 0.45 BZD142 REVERSE CURRENT at STAND-OFF VOLTAGE IR (µA) MAX. 5 5 5 5 5 5 5 5 5 5 56 62 68 75 82 91 100 110 120 130 VZ (V) at IZ (see Fig.4) MIN. NOM. 68 75 82 91 100 110 120 130 150 160 MAX. 75 82 90 100 110 121 132 143 165 171 Itest (m A) at VR (V) 68 75 82 91 100 110 120 130 150 160 Notes 61 68 74 82 90 99 108 117 135 149 1. To plete the type number the suffix is added to the basic type number, e.g. BZD142-68. 2. Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8” (10/1000 µs pulse); see Fig.5. ELECTRICAL CHARACTERISTICS BLOCKING CODE Tj = 25 °C unless...