BZD142W-68 Datasheet | NXP Semiconductors

- Zener and blocking function in one package - Glass passivated - Low leakage current - Excellent stability - Supplied in 8 mm embossed tape. handbook, halfpage BZD142W and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed MAM433 Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES SYMBOL Tstg Tj Ptot PRSM PARAMETER storage temperature junction temperature Ttp = 105 °C; see Fig.2 10/1000 µs exponential pulse; Tj = 25 °C prior to surge; see Fig.5 CONDITIONS MIN. - 65 - 65 - - MAX. +150 +150 UNIT °C °C W W Limiting values zener total power dissipation non-repetitive peak reverse power dissipation 1.5 100 Limiting values blocking diode VR ERSM continuous reverse voltage non-repetitive peak reverse avalanche energy L = 120 m H; Tj = Tjmax prior to surge; inductive load switched off - - 600 10 V m J ELECTRICAL CHARACTERISTICS ZENER Tj = 25 °C unless otherwise specified. WORKING VOLTAGE TEMPERATURE COEFFICIENT SZ (%/K) at Itest MIN. 0.07 0.07 0.07 MAX. 0.12 0.12 0.12 10 5 5 TEST CURRENT Itest (m A) CLAMPING VOLTAGE V(CL)R (V) MAX. 106 139 224 at IRSM (A)(2) 0.94 0.72 0.45 5 5 5 REVERSE CURRENT at STAND-OFF VOLTAGE IR (µA) MAX. at VR (V) 56 82 130 TYPE NUMBER SUFFIX (1) VZ (V) at IZ (see Fig.4) MIN. NOM. 68 100 160 MAX. 75 110 171 68 100 160 Notes 61 90 149 1. To plete the type number the suffix is added to the basic type number, e.g. BZD142W-68. 2. Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8” (10/1000 µs pulse); see Fig.5. 2000 May 01 Philips Semiconductors Product specification Zen Block™; zener with integrated blocking diode ELECTRICAL CHARACTERISTICS BLOCKING DIODE Tj = 25 °C unless otherwise specified. SYMBOL V(BR)R IR Cd PARAMETER reverse avalanche breakdown voltage reverse current diode capacitance CONDITIONS IR = 0.1 m A VR = 600 V...