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BZT52H-B12 Datasheet PDF

NXP Semiconductors BZT52H-B12

The marking bar indicates the cathode.
Part No. BZT52H-B12
Datasheet BZT52H-B12 Download
Manufacturer
NXP Semiconductors
Description Single Zener diodes
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BZT52H-B12 datasheet page 1 preview

FEATURES AND BENEFITS

„ Total power dissipation: ≤ 830 mW „ Wide working voltage range: nominal 2.4 V to 75 V (E24 range) „ Small plastic package suitable for surface-mounted design „ Low differential resistance „ AEC-Q101 qualified 1.3

APPLICATIONS

„ General regulation functions 1.4 Quick reference data Table 1. Symbol VF Ptot Quick reference data Parameter forward voltage total power dissipation Conditions IF = 10 mA Tamb ≤ 25 °C Min Typ Max Unit [1] - - 0.9 V [2] - - 375 mW [3] - - 830 mW [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 2. Pinning information Table 2. Pin 1 2 Pinning

DESCRIPTION

cathode anode [1] The marking bar indicates the cathode. Simplified outline [1] 12 Graphic symbol 12 006aaa152 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 3. Ordering information 4.
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