BZX55-13 Datasheet | NXP Semiconductors

URES - Total power dissipation: max. 500 m W - Tolerance series: ±5% - Working voltage range: nom. 2.4 to 75 V (E24 range) - Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS - Low voltage stabilizers or voltage references. The diodes are type branded. BZX55 series DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZX55-C2V4 to BZX55-C75). handbook, halfpage k a MAM239 Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge Tamb = 50 °C; note 1 Tamb = 50 °C; note 2 tp = 100 µs; square wave; Tj = 25 °C prior to surge tp = 8.3 ms; square wave; Tj ≤ 150 °C prior to surge Tstg Tj Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; lead length 8 mm. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 100 m A; see Fig.4 MIN. - MAX. 1.0 V UNIT storage temperature junction temperature CONDITIONS MIN. - MAX. 250 UNIT m A see Table “Per type” - - - - - 65 - 400 500 40 30 +200 200 m W m W W W °C °C 1996 Apr 26 1996 Apr 26 3 Philips Semiconductors Per type Tj = 25 °C; unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZ MAX. 600 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 at IZtest MAX. 85 85 85 85 85 85 80 70 50 30 10 8 7 7 10 15 20 20 26 30 40 50 55 TEST TEMP. COEFF. SZ (m V/K) CURRENT at IZtest IZtest (m A) see Figs...