NXP Semiconductors C33740
Amplifier Transistors
FEATURES
High current Low voltage 1.3APPLICATIONS
General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) open base; IC = 10 mA peak collector current DC current gain BC817; BC817W; BC337 IC = 100 mA; VCE = 1 V BC817-16; BC817-16W; BC337-16 BC817-25; BC817-25W; BC337-25 BC817-40; BC817-40W; BC337-40 [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Min Typ Max Unit - - 45 V - - - - [1] - - 100 - 100 - 160 - 250 - 500 mA 1A 600 250 400 600 NXP Semiconductors 2. Pinning information Table 3. Pin SOT23 1 2 3 PinningDESCRIPTION
base emitter collector SOT323 1 2 3 base emitter collector SOT54 1 2 3 emitter base collector SOT54A 1 2 3 emitter base collector SOT54 variant 1 emitter 2 base 3 collector BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Simplified outline Symbol 3 1 2 3 1 2 sym021 3 1 2 sot323_so 3 1 2 sym021 1 2 3 001aab347 3 2 1 sym026 1 2 3 001aab348 3 2 1 sym026 1 2 3 001aab447 3 2 1 sym026 BC817_BC817W_BC337_6 Product data sheet Rev.