ED1402 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 200 m A) - Low voltage (max. 20 V) - High gain. APPLICATIONS - General purpose switching and amplification. 1 handbook, halfpage PINNING PIN 1 2 3 emitter base collector DESCRIPTION DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. PNP plement: ED1602. 2 3 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to TO-92; SOT54 standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 28 20 6 200 200 200 500 +150 150 +150 V V V m A m A m A m W °C °C °C UNIT 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to TO-92; SOT54 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain ED1402B ED1402C ED1402D ED1402E VBE Cc f T Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. base-emitter voltage collector capacitance transition frequency IC = 2 m A; VCE = 5 V; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 1 m A; VCE = 10 V; f = 100 MHz CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 2 m A; VCE = 5 V 150 202 290 410 - - 100 225 318 450 810 770 5 - - - - MIN. 5 100 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 250 UNIT K/W MAX. 15 UNIT n A µA n A m V p F MHz 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor PACKAGE OUTLINE Plastic...