ED1602 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 20 V). APPLICATIONS - Audio pre-amplifiers and driver stages - FM multiplex stereo decoders - Small-signal circuits in television receivers - Medium speed switching. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN plement: ED1402. Fig.1 1 handbook, halfpage 2 3 PINNING PIN 1 2 3 emitter base collector DESCRIPTION 3 2 1 MAM281 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. - 25 - 20 - 4 - 100 - 200 - 200 500 +150 150 +150 UNIT V V V m A m A m A m W °C °C °C 1999 Apr 27 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain ED1602C ED1602D ED1602E VCEsat VBE Cc f T F collector-emitter saturation voltage IC = - 10 m A; IB = - 0.5 m A IC = - 100 m A; IB = - 5 m A base-emitter voltage collector capacitance transition frequency noise figure IC = - 2 m A; VCE = - 5 V IE = ie = 0; VCB = - 10V; f = 1 MHz IC = - 5 m A; VCE = - 5 V; f = 100 MHz IC...