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IRF540S Datasheet PDF

NXP Semiconductors IRF540S

The IRF540S is supplied in the SOT404 (D2PAK) surface mounting package.

IRF540S Specifications

  • Drain-Source Voltage : 100V
Source: Octopart
Part No. IRF540S
Datasheet IRF540S Download
Manufacturer
NXP Semiconductors
Description N-channel TrenchMOS transistor
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IRF540S datasheet page 1 preview

FEATURES

● ’Trench’ technology
● Low on-state resistance
● Fast switching
● Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 23 A g RDS(ON) ≤ 77 mΩ s

GENERAL DESCRIPTION

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

APPLICATIONS

:● d.c. to d.c. converters
● switched mode power supplies
● T.V. and computer monitor power supplies The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN 1 2 3 tab gate drain1 source drain

DESCRIPTION

SOT78 (TO220AB) tab SOT404 (D2PAK) tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX.
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