NXP Semiconductors IRF830
The IRF830 is supplied in the SOT78 (TO220AB) conventional leaded package.| Part No. | IRF830 |
|---|---|
| Datasheet | IRF830 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PowerMOS transistor |
| Buy | Stock & Price |
FEATURES
● Repetitive Avalanche Rated● Fast switching
● High thermal cycling performance
● Low thermal resistance g IRF830 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A RDS(ON) ≤ 1.5 Ω s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. PINNING PIN 1 2 3 tab gate drain source drainDESCRIPTION
SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX.
