IRF830 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated Features - Repetitive Avalanche Rated - Fast switching - High thermal cycling performance - Low thermal resistance g SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A RDS(ON) ≤ 1.5 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF830 is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain...