Datasheet4U Logo Datasheet4U.com

IRFZ48N - N-Channel MOSFET

General Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.

Key Features

  • very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ48N Power MOSFET International Rectifier
IRFZ48NL Power MOSFET International Rectifier
IRFZ48NLPBF HEXFET Power MOSFET International Rectifier
IRFZ48NPBF Power MOSFET International Rectifier
IRFZ48NS Power MOSFET International Rectifier

Other Datasheets by NXP Semiconductors

Part Number Description
IRFZ44N N-Channel MOSFET
IRFZ44NS N-Channel MOSFET
IRFZ24N N-channel enhancement mode TrenchMOS transistor
IRF530N N-channel TrenchMOS transistor
IRF540 N-channel TrenchMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ48N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.