NXP Semiconductors J112
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | J112 |
|---|---|
| Datasheet | J112 Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel silicon field-effect transistors |
| Buy | Stock & Price |
DESCRIPTION
Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.FEATURES
● High speed switching● Interchangeability of drain and source connections
● Low RDS on at zero gate voltage PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbook, halfpage 2 3 J111; J112; J113 g MAM042 d s Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA J111 Drain-source voltage Drain current VDS = 15 V; VGS = 0 Total power dissipation up to Tamb = 50 °C Gate-source cut-off voltage VDS = 5 V; ID = 1 µA Drain-source on-state resistance VDS = 0.1 V; VGS = 0 RDS on max. 30 50 100 Ω −VGS off min. max. 3 10 1 5 0.5 3 V V Ptot max. 400 400 400 mW IDSS min. 20 5 2 mA ±VDS max. 40 J112 40 J113 40 V July 1993 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum Sy...
