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KM110B - Magnetic field sensor

General Description

The KM110B/2 is a sensitive magnetic field sensor, employing the magnetoresistive effect in thin-film permalloy.

A Ferroxdure FXD100 magnet mounted on the back of the sensor package provides an auxiliary field of 3.6 kA/m in the x-direction of the sensor.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET KM110B/2 Magnetic field sensor Preliminary specification File under Discrete Semiconductors, SC17 November 1994 Philips Semiconductors Philips Semiconductors Preliminary specification Magnetic field sensor DESCRIPTION The KM110B/2 is a sensitive magnetic field sensor, employing the magnetoresistive effect in thin-film permalloy. A Ferroxdure FXD100 magnet mounted on the back of the sensor package provides an auxiliary field of 3.6 kA/m in the x-direction of the sensor. Typical applications for the KM110B/2 are current measurement, linear position measurement, rotational speed detection of magnetic pole wheels as well as magnetic field measurement. The sensor can be operated at any frequency between DC and 1 MHz.