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KMZ11B1 Datasheet PDF

NXP Semiconductors KMZ11B1

The KMZ11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear displacement sensors, proximity detectors, etc. The sensor can be operated at any frequency between DC and 1 MHz.
Part No. KMZ11B1
Datasheet KMZ11B1 Download
Manufacturer
NXP Semiconductors
Description Magnetic field sensor
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KMZ11B1 datasheet page 1 preview

DESCRIPTION

PINNING PIN 1 2 3 4 5 to 8 SYMBOL +VO GND −VO VCC n.c.

DESCRIPTION

output voltage ground output voltage supply voltage not connected pin 1 index KMZ11B1 8 handbook, halfpage 5 Hy Hx 1 4 MGD804 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL VCC Hy Hx S Rbridge Voffset PARAMETER bridge supply voltage magnetic field strength auxiliary field sensitivity bridge resistance offset voltage − −2 − − 1.9 −1.5 MIN. 5 − 3 4 − − TYP. − +2 − − 2.9 +1.5 MAX. V kA/m kA/m mV ⁄ V ---------------kA ⁄ m kΩ mV/V UNIT CIRCUIT DIAGRAM MLC716 handbook, full pagewidth 1 +VO 2 GND 3 –VO 4 VCC Fig.2 Simplified circuit diagram. 1996 Dec 11 2 Philips Semiconductors Preliminary specification Magnetic field sensor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge PARAMETER bridge supply voltage total power dissipation storage temperature bridge operating temperature up to Tamb = 130 °C CONDITIONS − − −65 −40 MIN. KMZ11B1 MAX. 12 120 +150 +150 V UNIT mW °C °C handbook, halfpage 150 MSA927 P tot (mW) 100 50 0 0 50 100 Tamb (o C) 150 Fig.3 Power derating curve.
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