FEATURES
I Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 128 µs with δ of 10 %: N Output power = 500 W N Power gain = 17 dB N Efficiency = 50 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (960 MHz to 1215 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor 1.3 APPLICATIONS
I L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning DESCRIPTION
drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLA6H0912-500 DESCRIPTION
flanged ceramic package; 2 mounting holes; 2 leads Version SOT634A Type number 4.
NXP Semiconductors
