LA6H0912-500 Datasheet | NXP Semiconductors

BLA6H0912-500 LDMOS avionics radar power transistor Rev. 01 - 5 March 2009 .. Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 128 µs; δ = 10 %; IDq = 100 m A; in a class-AB production test circuit. Mode of operation pulsed RF f (MHz) 960 to 1200 VDS (V) 50 PL (W) 500 Gp (d B) 17 ηD (%) 50 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 m A, a tp of 128 µs with δ of 10 %: N Output power = 500 W N Power gain = 17 d B N Efficiency = 50 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (960 MHz to 1215 MHz) I Internally matched for ease of use I pliant to Directive 2002/95/EC, regarding restriction of hazardous substances (Ro HS) NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor 1.3 Applications .. I L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLA6H0912-500 Description flanged ceramic package; 2 mounting holes; 2 leads Version SOT634A Type...