LEE1015
FEATURES
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very good stability of the characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Intended for use in mon emitter, class A power amplifiers for applications that require a high level of linearity. DESCRIPTION
MAM229
LEE1015T
PINNING
- SOT122A PIN 1 2 3 4 collector emitter base emitter DESCRIPTION handbook, halfpage 4 c
1 3 b e
NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package.
Marking code: 1015T.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class A narrowband amplifier (guaranteed values). MODE OF OPERATION Class A (CW) Note 1. The stated intermodulation distortion level is referred to...
