NXP Semiconductors LEE1015
The stated intermodulation distortion level is referred to the total output power of 18.25 dBm, which corresponds to the sum of the power carried by each of the two equal amplitude tones at f1 = 859 MHz and f2 = 861 MHz. The product is entirely safe provided that the BeO disc is not damaged.| Part No. | LEE1015 |
|---|---|
| Datasheet | LEE1015 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN microwave power transistor |
| Buy | Stock & Price |
FEATURES
● Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR● Interdigitated structure provides high emitter efficiency
● Gold metallization realizes very good stability of the characteristics and excellent lifetime
● Multicell geometry gives good balance of dissipated power and low thermal resistance.
APPLICATIONS
Intended for use in common emitter, class A power amplifiers for applications that require a high level of linearity.DESCRIPTION
2 MAM229 LEE1015T PINNING - SOT122A PIN 1 2 3 4 collector emitter base emitterDESCRIPTION
handbook, halfpage 4 c 1 3 b e NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package. Marking code: 1015T. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class A narrowband amplifier (guaranteed values). MODE OF OPERATION Class A (CW) Note 1. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
