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LLE16120X Datasheet

Manufacturer: NXP Semiconductors
LLE16120X datasheet preview

Datasheet Details

Part number LLE16120X
Datasheet LLE16120X_PhilipsSemiconductors.pdf
File Size 74.85 KB
Manufacturer NXP Semiconductors
Description NPN microwave power transistor
LLE16120X page 2 LLE16120X page 3

LLE16120X Overview

handbook, 4 columns 1 c b 3 e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. Top view MAM112 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.

LLE16120X Key Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
  • Interdigitated structure provides high emitter efficiency
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input prematching ensures good stability and allows an easier design of wideband circuits

LLE16120X Applications

  • SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
  • toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or di
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LLE16120X Distributor

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