LLE16120X Datasheet (PDF) Download
NXP Semiconductors
LLE16120X

Key Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
  • Interdigitated structure provides high emitter efficiency
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS Intended for use in common emitter, class AB power amplifiers in CW conditions for professional applications at 1.65 GHz. 2