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LLE16350X Datasheet NPN Microwave Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power.

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.

Top view handbook, 4 columns LLE16350X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class AB amplifier.

MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥29 Gpo (dB) ≥8 ηC (%) Zi;

Key Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

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LLE16350X Distributor