NXP Semiconductors LLE18010X
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.| Part No. | LLE18010X |
|---|---|
| Datasheet | LLE18010X Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN microwave power transistor |
| Buy | Stock & Price |
FEATURES
● Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR● Interdigitated structure provides high emitter efficiency
● Gold metallization realizes very good stability of the characteristics and excellent lifetime
● Multicell geometry gives good balance of dissipated power and low thermal resistance
● Internal input prematching ensures good stability and allows an easier design of wideband circuits. APPLICATION Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications up to 2 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. 2 Top view handbook, 4 columns LLE18010X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.85 VCE (V) 24 ICQ (mA) 10 PL1 (W) ≥1 Gpo (dB) ≥8.5 Zi; ZL (Ω) see Figs 6 and 7 PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flangeDESCRIPTION
1 c b 3 e MAM112 Fig.1 Simplified outline and symbol.
