Datasheet Details
| Part number | LLE18010X |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 78.10 KB |
| Description | NPN microwave power transistor |
| Datasheet |
 LLE18010X Datasheet
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General Description
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.
Key Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
- Interdigitated structure provides high emitter efficiency.
- Gold metallization realizes very good stability of the characteristics and excellent lifetime.
- Multicell geometry gives good balance of dissipated power and low thermal resistance.
- Internal input prematching ensures good stability and allows an easier design of wideband circuits.