LLE18040X
FEATURES
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very good stability of the characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Internal input prematching ensures good stability and allows an easier design of wideband circuits. APPLICATION Intended for use in mon emitter, class AB amplifiers in CW conditions for professional applications between 1.7 GHz and 2 GHz. DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.
2 Top view
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) 24 ICQ (A) 0.04 PL1 (W) ≥4 Gpo (d B) ≥8.5 ηC (%) Zi; ZL (Ω)
Class AB (CW) 1.85 typ. 48 see...
