LLE18040X Description
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. 2 Top view LLE18040X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) 24 ICQ (A) 0.04 PL1 (W) ≥4 Gpo (dB) ≥8.5 ηC (%) Zi;.
LLE18040X Key Features
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very good stability of the characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Internal input prematching ensures good stability and allows an easier design of wideband circuits. APPLICATION Intended
LLE18040X Applications
- SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or di