NXP Semiconductors LLE18100X
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.| Part No. | LLE18100X |
|---|---|
| Datasheet | LLE18100X Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN silicon planar epitaxial microwave power transistor |
| Buy | Stock & Price |
FEATURES
● Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR● Interdigitated structure provides high emitter efficiency
● Gold metallization realizes very good stability of the characteristics and excellent lifetime
● Multicell geometry gives good balance of dissipated power and low thermal resistance
● Internal input prematching ensures good stability and allows an easier design of wideband circuits. PINNING - SOT437A PIN 1 2 3 base emitter connected to flange 3 MBB012 LLE18100X
APPLICATIONS
Intended for use in common emitter, class AB power amplifiers in CW conditions for professional applications at 1.85 GHz.DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION class AB (CW) f (GHz) 1.85 VCE (V) 24 ICQ (A) 0.1 PL1...
