• Part: LLE18100X
  • Description: NPN silicon planar epitaxial microwave power transistor
  • Category: Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 60.61 KB
LLE18100X Datasheet (PDF) Download
NXP Semiconductors
LLE18100X

Key Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
  • Interdigitated structure provides high emitter efficiency
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input prematching ensures good stability and allows an easier design of wideband circuits. PINNING - SOT437A PIN 1 2 3 base emitter connected to flange 3 MBB012