Description
NPN silicon planar epitaxial microwave power transistor in a FO-229 glued cap metal ceramic flange package, with emitter connected to flange.
Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
- Interdigitated structure provides high emitter efficiency.
- Gold metallization realizes very good stability of the characteristics and excellent lifetime.
- Multicell geometry gives good balance of dissipated power and low thermal resistance.
- Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.
LLE18150X Datasheet
