LLE18150X Description
NPN silicon planar epitaxial microwave power transistor in a FO-229 glued cap metal ceramic flange package, with emitter connected to flange. WARNING Product and environmental safety - toxic materials Top view handbook, 4 columns LLE18150X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.85 VCE (V) 24 ICQ (A) 0.05 PL1 (W) ≥12...
LLE18150X Key Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very good stability of the characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATI