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LLE18300X Datasheet

Manufacturer: NXP Semiconductors
LLE18300X datasheet preview

Datasheet Details

Part number LLE18300X
Datasheet LLE18300X_PhilipsSemiconductors.pdf
File Size 89.45 KB
Manufacturer NXP Semiconductors
Description NPN microwave power transistor
LLE18300X page 2 LLE18300X page 3

LLE18300X Overview

2 handbook, 4 columns LLE18300X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥27 Gpo (dB) ≥7.8 ηC (%) Zi; ZL (Ω) Class AB (CW) 1.85 typ.

LLE18300X Key Features

  • Interdigitated structure provides high emitter efficiency
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATI

LLE18300X Applications

  • SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
  • toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or di
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LLE18300X Distributor

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