NXP Semiconductors LLE18300X
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.| Part No. | LLE18300X |
|---|---|
| Datasheet | LLE18300X Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN microwave power transistor |
| Buy | Stock & Price |
FEATURES
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR● Interdigitated structure provides high emitter efficiency
● Gold metallization realizes very good stability of the characteristics and excellent lifetime
● Multicell geometry gives good balance of dissipated power and low thermal resistance
● Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATION Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.7 GHz and 2 GHz.
DESCRIPTION
2 handbook, 4 columns LLE18300X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥27 Gpo (dB) ≥7.8 ηC (%) Zi; ZL (Ω) Class AB (CW) 1.85 typ. 40 see Figs 8 and 9 PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flangeDESCRIPTION
1 c b 3 e Top view MAM112 NPN silicon planar epitaxial microwave power transistor in an SOT437A glued cap metal ceramic flange package, with emitter connected to flange.
