Datasheet4U Logo Datasheet4U.com

LTE21009R - NPN microwave power transistor

General Description

1 c APPLICATIONS

Common emitter class-A linear power amplifiers up to 4.2 GHz.

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Key Features

  • Diffused emitter ballasting resistors.
  • Self-aligned process entirely ion implanted and gold sandwich metallization.
  • optimum temperature profile.
  • excellent performance and reliability.
  • Input matching cell improves input impedance and facilitates the design of wideband circuits. olumns LTE21009R.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LTE283QV-F01 TFT LCD Samsung
LTE-1650 Property of Lite-On Only Lite-On Technology
LTE-1653K Property of Lite-On Only Lite-On Technology
LTE-209 Property of Lite-On Only Lite-On Technology
LTE-239 Property of Lite-On Only Lite-On Technology

Other Datasheets by NXP Semiconductors

Part Number Description
LTE21015R NPN microwave power transistor
LTE21025R NPN microwave power transistor
LTE42005S NPN microwave power transistor
LTE42008R NPN microwave power transistor
LTE42012R NPN microwave power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile • excellent performance and reliability • Input matching cell improves input impedance and facilitates the design of wideband circuits. olumns LTE21009R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c APPLICATIONS • Common emitter class-A linear power amplifiers up to 4.2 GHz.