LTE21009R - NPN microwave power transistor

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NXP

LTE21009R NPN microwave power transistor by NXP - Datasheet Preview — Datasheet preview – LTE21009R

Datasheet Details

Part number	LTE21009R
Manufacturer	NXP
File Size	55.73 KB
Description	NPN microwave power transistor
Datasheet	LTE21009R Datasheet
Additional preview pages of the LTE21009R datasheet.

LTE21009R Product details

Description

1 c APPLICATIONS

Common emitter class-A linear power amplifiers up to 4.2 GHz.

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Features

Diffused emitter ballasting resistors.
Self-aligned process entirely ion implanted and gold sandwich metallization.
optimum temperature profile.
excellent performance and reliability.
Input matching cell improves input impedance and facilitates the design of wideband circuits. olumns LTE21009R.

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Published: Mar 27, 2005 |