Datasheet4U Logo Datasheet4U.com

LTE21009R Datasheet NPN Microwave Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power.

General Description

1 c APPLICATIONS • Common emitter class-A linear power amplifiers up to 4.2 GHz.

3 b e MAM131 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

2 Top view Marking code: 435 Fig.1 Simplified outline and symbol.

Key Features

  • Diffused emitter ballasting resistors.
  • Self-aligned process entirely ion implanted and gold sandwich metallization.
  • optimum temperature profile.
  • excellent performance and reliability.
  • Input matching cell improves input impedance and facilitates the design of wideband circuits. olumns LTE21009R.

More Datasheets from NXP Semiconductors

Part Number Description
LTE21015R NPN microwave power transistor
LTE21025R NPN microwave power transistor
LTE42005S NPN microwave power transistor
LTE42008R NPN microwave power transistor
LTE42012R NPN microwave power transistor

LTE21009R Distributor