LTE21009R Description
1 c APPLICATIONS mon emitter class-A linear power amplifiers up to 4.2 GHz. 3 b e MAM131 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 435 Fig.1 Simplified outline and symbol.
LTE21009R Key Features
- Diffused emitter ballasting resistors
- Self-aligned process entirely ion implanted and gold sandwich metallization
- optimum temperature profile
- excellent performance and reliability
- Input matching cell improves input impedance and facilitates the design of wideband circuits
- SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
LTE21009R Applications
- mon emitter class-A linear power amplifiers up to 4.2 GHz
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di