LTE21009R Datasheet (PDF) Download
NXP Semiconductors
LTE21009R

Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Marking code: 435 Fig.1 Simplified outline and symbol.

Key Features

  • Diffused emitter ballasting resistors
  • Self-aligned process entirely ion implanted and gold sandwich metallization
  • optimum temperature profile
  • excellent performance and reliability
  • Input matching cell improves input impedance and facilitates the design of wideband circuits. olumns LTE21009R PINNING
  • SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c