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LV1721E50R Datasheet

Manufacturer: NXP Semiconductors
LV1721E50R datasheet preview

LV1721E50R Details

Part number LV1721E50R
Datasheet LV1721E50R_PhilipsSemiconductors.pdf
File Size 61.06 KB
Manufacturer NXP Semiconductors
Description NPN microwave power transistor
LV1721E50R page 2 LV1721E50R page 3

LV1721E50R Overview

Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class-A wideband amplifier. MODE OF OPERATION Class-A (CW) f (GHz) 1.7 to 2.1 VCE (V) 16 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.

LV1721E50R Key Features

  • Interdigitated structure provides high emitter efficiency
  • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
  • Gold metallization realizes very stable characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits

LV1721E50R Applications

  • mon emitter class-A amplifiers in CW conditions for military and professional applications in the 1.7 GHz to 2.1 GHz band. DESCRIPTION
  • SOT445A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
  • toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di

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