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LV1721E50R - NPN microwave power transistor

Datasheet Summary

Description

Marking code: 1721E50R 3 2 Top view 3 handbook, halfpage LV1721E50R PINNING - SOT445A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b e MAM251 NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the

Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

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Datasheet Details

Part number LV1721E50R
Manufacturer NXP
File Size 61.06 KB
Description NPN microwave power transistor
Datasheet download datasheet LV1721E50R Datasheet
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    DISCRETE SEMICONDUCTORS DATA SHEET LV1721E50R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS • Common emitter class-A amplifiers in CW conditions for military and professional applications in the 1.
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