Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
LV1721E50R NPN microwave power transistor
Product specification Supersedes data of June 1992 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS
- mon...