Description
Marking code: 2024E45R 3 2 Top view 3
handbook, halfpage
LV2024E45R
PINNING - SOT445A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
1
c b e
MAM251
NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the
Features
- Interdigitated structure provides high emitter efficiency.
- Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
- Gold metallization realizes very stable characteristics and excellent lifetime.
- Multicell geometry gives good balance of dissipated power and low thermal resistance.
- Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.
LV2024E45R Datasheet
