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LV2024E45R Datasheet

Manufacturer: NXP Semiconductors
LV2024E45R datasheet preview

Datasheet Details

Part number LV2024E45R
Datasheet LV2024E45R_PhilipsSemiconductors.pdf
File Size 62.09 KB
Manufacturer NXP Semiconductors
Description NPN microwave power transistor
LV2024E45R page 2 LV2024E45R page 3

LV2024E45R Overview

Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class-A wideband amplifier. MODE OF OPERATION Class-A (CW) f (GHz) 2 to 2.4 VCE (V) 16 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.

LV2024E45R Key Features

  • Interdigitated structure provides high emitter efficiency
  • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
  • Gold metallization realizes very stable characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits

LV2024E45R Applications

  • mon emitter class-A amplifiers in CW conditions for military and professional applications in the 2 to 2.4 GHz band. DESCRIPTION
  • SOT445A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
  • toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di
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LV2024E45R Distributor

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