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LVE21050R - NPN microwave power transistor

Description

APPLICATIONS

Common emitter class-A linear power amplifiers up to 4.2 GHz.

NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange.

Features

  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
  • Self-aligned process entirely ion implanted.
  • Gold metallization ensures an optimum temperature profile with excellent performance and reliability.
  • Input matching cell improves input impedance and allows an easier design of wideband circuits. handbook, halfpage LVE21050R.

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DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Self-aligned process entirely ion implanted • Gold metallization ensures an optimum temperature profile with excellent performance and reliability • Input matching cell improves input impedance and allows an easier design of wideband circuits. handbook, halfpage LVE21050R PINNING - SOT445A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION APPLICATIONS • Common emitter class-A linear power amplifiers up to 4.2 GHz.
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