Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
LVE21050R NPN microwave power transistor
Product specification Supersedes data of June 1992 1997 Feb 14
Philips Semiconductors
Product specification
NPN microwave power transistor
Features
- Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
- Self-aligned process entirely ion implanted
- Gold metallization ensures an optimum temperature profile with excellent performance and reliability
- Input matching cell improves input impedance and allows an easier design of wideband circuits. handbook, halfpage
PINNING
- SOT445A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
APPLICATION...