LVE21050R - NPN microwave power transistor

Product Overview

NXP

Part number	LVE21050R
Manufacturer	NXP
File Size	63.79 KB
Description	NPN microwave power transistor
Datasheet	LVE21050R Datasheet
Additional preview pages of the LVE21050R datasheet.

APPLICATIONS Common emitter class-A linear power amplifiers up to 4.2 GHz.

Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
Self-aligned process entirely ion implanted.
Gold metallization ensures an optimum temperature profile with excellent performance and reliability.
Input matching cell improves input impedance and allows an easier design of wideband circuits. handbook, halfpage LVE21050R.

📁 Similar Datasheet

Other Datasheets by NXP

Published: Mar 30, 2005 |