LVE21050R Datasheet NPN Microwave Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 1997 Feb 14 Philips Semiconductors Product speciﬁcation NPN microwave power.

Datasheet Details

Part number	LVE21050R
Manufacturer	NXP Semiconductors
File Size	63.79 KB
Description	NPN microwave power transistor
Datasheet	LVE21050R_PhilipsSemiconductors.pdf

General Description

APPLICATIONS • Common emitter class-A linear power amplifiers up to 4.2 GHz.

3 1 c b 3 DESCRIPTION Top view 2 MAM251 e NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange.

Fig.1 Simplified outline and symbol.

Key Features

Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
Self-aligned process entirely ion implanted.
Gold metallization ensures an optimum temperature profile with excellent performance and reliability.
Input matching cell improves input impedance and allows an easier design of wideband circuits. handbook, halfpage LVE21050R.

LVE21050R Distributor & Price

Compare LVE21050R distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from NXP Semiconductors

Part Number	Description