LVE21050R Overview
APPLICATIONS mon emitter class-A linear power amplifiers up to 4.2 GHz. 3 1 c b 3 DESCRIPTION Top view 2 MAM251 e NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange. Fig.1 Simplified outline and symbol.
LVE21050R Key Features
- Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
- Self-aligned process entirely ion implanted
- Gold metallization ensures an optimum temperature profile with excellent performance and reliability
- Input matching cell improves input impedance and allows an easier design of wideband circuits
- SOT445A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
LVE21050R Applications
- mon emitter class-A linear power amplifiers up to 4.2 GHz
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di