MC33GD3100 Description
The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT stress during faults.
MC33GD3100 Key Features
- SPI interface for safety monitoring, programmability and flexibility
- Low propagation delay and minimal PWM distortion
- Integrated Galvanic signal isolation (up to 8 kV)
- Integrated gate drive power stage capable of 15 A peak source and sink
- Fully programmable Active Miller Clamp
- patible with negative gate supply
- patible with current sense and temperature sense IGBTs
- Integrated soft shutdown, two-level turn