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MC34GD3000 - Three phase field effect transistor predriver

Description

The 34GD3000 is a field effect transistor (FET) predriver designed for three phase motor control and similar applications.

It meets the stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified.

Features

  • Extended supply voltage operating range: 6.0 V to 60 V.
  • Gate drive capability of 1.0 A to 2.5 A.
  • Device protection against reverse charge-injection from CGD and CGS of external FETs.
  • Includes a charge pump to support full FET drive at low battery voltages.
  • Wide dead time range (50 ns to 12 µs) programmable via the SPI port.
  • Integrated overcurrent, desaturation, and phase fault-detection.
  • Immunity against positive or negative transie.

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Datasheet preview – MC34GD3000

Datasheet Details

Part number MC34GD3000
Manufacturer NXP
File Size 837.95 KB
Description Three phase field effect transistor predriver
Datasheet download datasheet MC34GD3000 Datasheet
Additional preview pages of the MC34GD3000 datasheet.

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Full PDF Text Transcription

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MC34GD3000 Three phase field effect transistor predriver Rev. 7.0 — 16 March 2022 Product data sheet 1 General description The 34GD3000 is a field effect transistor (FET) predriver designed for three phase motor control and similar applications. It meets the stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified. The IC contains three high-side FET predrivers and three low-side FET predrivers. Three external bootstrap capacitors provide gate charge to the high-side FETs. The IC interfaces to a MCU via six direct input control signals, an SPI port for device setup and asynchronous reset, enable and interrupt signals. Both 5.0 and 3.3 V logic level inputs are accepted and 5.0 V logic level outputs are provided.
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