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MC34GD3000 Datasheet

Manufacturer: NXP Semiconductors
MC34GD3000 datasheet preview

Datasheet Details

Part number MC34GD3000
Datasheet MC34GD3000-NXP.pdf
File Size 837.95 KB
Manufacturer NXP Semiconductors
Description Three phase field effect transistor predriver
MC34GD3000 page 2 MC34GD3000 page 3

MC34GD3000 Overview

The 34GD3000 is a field effect transistor (FET) predriver designed for three phase motor control and similar applications. It meets the stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified. The IC contains three high-side FET predrivers and three low-side FET predrivers.

MC34GD3000 Key Features

  • Extended supply voltage operating range: 6.0 V to 60 V
  • Gate drive capability of 1.0 A to 2.5 A
  • Device protection against reverse charge-injection from CGD and CGS of external FETs
  • Includes a charge pump to support full FET drive at low battery voltages
  • Wide dead time range (50 ns to 12 µs) programmable via the SPI port
  • Integrated overcurrent, desaturation, and phase fault-detection
  • Immunity against positive or negative transient voltage spikes on the gate driver
  • Current shoot-through protection built into dead time control
  • Supports direct 3.3 V and 5.0 V logic interface to MCUs
  • Integrated current sensing amplifier

MC34GD3000 Applications

  • Extended supply voltage operating range: 6.0 V to 60 V
  • Gate drive capability of 1.0 A to 2.5 A
  • Device protection against reverse charge-injection from CGD and CGS of external FETs
  • Includes a charge pump to support full FET drive at low battery voltages
  • Wide dead time range (50 ns to 12 µs) programmable via the SPI port
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