MF1ICS5005
Key Features
- Type: Material: Thickness: sandwich structure PSG / Nitride (on top) 500 nm / 600 nm
- Bump material: Bump hardness: Bump shear strength: Bump height: Bump height uniformity: within a die: within a wafer: wafer to wafer: Bump flatness: Bump size: 1 LA, LB, VSS 1 TESTIO Bump size variation: Under bump metallisation: > 99.9% pure Au 35 - 80 HV 0.005 > 70 MPa 18 µm ± 2 µm ± 3 µm ± 4 µm ± 1.5 µm 104 x 104 µm 89 x 104 µm ± 5 µm sputtered TiW
