NXP Semiconductors MHT1008N
RF Power LDMOS Transistor
| Part No. | MHT1008N |
|---|---|
| Datasheet | MHT1008N Download |
| Manufacturer |  NXP Semiconductors |
| Description | RF Power LDMOS Transistor |
| Buy | Stock & Price |
FEATURES
● Characterized with series equivalent large--signal impedance parameters and common source S--parameters● Qualified for operation at 32 Vdc
● Integrated ESD protection
● 150C case operating temperature
● 150C die temperature capability Target
APPLICATIONS
● Consumer cooking as PA driver● Commercial cooking as PA driver Gate Drain (Top View) Note: The center pad on the backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MHT1008N 1 Table 1.
MAXIMUM RATINGS
Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above 25C VDSS VGS VDD Tstg TC TJ PD –0.5, +65 –6.0, +10 32, +0 –65 to +150 –40 to +150 –40 to +150 48.1 0.38 Vdc Vdc Vdc C C C W W/C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 88C, 12.5 W CW, 28 Vdc, IDQ = 110 mA, 2450 MHz Table 3.
