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MHT1008N - RF Power LDMOS Transistor

Key Features

  • Characterized with series equivalent large--signal impedance parameters and common source S--parameters.
  • Qualified for operation at 32 Vdc.
  • Integrated ESD protection.
  • 150C case operating temperature.
  • 150C die temperature capability Target.

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Freescale Semiconductor Technical Data Document Number: MHT1008N Rev. 0, 5/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band. Typical Performance: VDD = 28 Vdc, IDQ = 110 mA Frequency (MHz) Signal Type Gps (dB) PAE (%) Pout (W) 2400 CW 18.5 57.5 12.5 2450 18.6 56.3 12.5 2500 18.3 55.6 12.5 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 2450 CW > 5:1 at all Phase Angles Pin (dBm) 26 (3 dB Overdrive) Test Voltage Result 32 No Device Degradation MHT1008N 2450 MHz, 12.5 W CW, 28 V RF POWER LDMOS TRANSISTOR FOR CONSUMER AND COMMERCIAL COOKING PLD--1.