MHT1008N
Key Features
- Characterized with series equivalent large--signal impedance parameters and mon source S--parameters
- Qualified for operation at 32 Vdc
- Integrated ESD protection
- 150C case operating temperature
- 150C die temperature capability Target Applications
- Consumer cooking as PA driver
- Freescale Semiconductor, Inc
- All rights reserved. RF Device Data Freescale Semiconductor, Inc. MHT1008N 1 Table
- Characteristic Table
- Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS
