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Freescale Semiconductor Technical Data
Document Number: MHT1008N Rev. 0, 5/2016
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.
Typical Performance: VDD = 28 Vdc, IDQ = 110 mA
Frequency (MHz)
Signal Type
Gps (dB)
PAE (%)
Pout (W)
2400
CW
18.5
57.5
12.5
2450
18.6
56.3
12.5
2500
18.3
55.6
12.5
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
2450
CW
> 5:1
at all Phase
Angles
Pin (dBm)
26 (3 dB Overdrive)
Test Voltage
Result
32
No Device
Degradation
MHT1008N
2450 MHz, 12.5 W CW, 28 V RF POWER LDMOS TRANSISTOR
FOR CONSUMER AND COMMERCIAL COOKING
PLD--1.
MHT1008N Datasheet
