Datasheet4U Logo Datasheet4U.com

MMBD4148 - High-speed switching diode

General Description

High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Key Features

  • I High switching speed: trr ≤ 4 ns I Low leakage current I Repetitive peak reverse voltage: VRRM ≤ 75 V 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMBD4148 Surface mount switching diode GME
MMBD4148 Small Signal Diode Fairchild Semiconductor
MMBD4148 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP
MMBD4148 Three Terminals SMD Switching Diodes TAITRON
MMBD4148 SWITCHING DIODE WILLAS

Other Datasheets by NXP Semiconductors

Part Number Description
MMBT2222A NPN switching transistor
MMBT3904 NPN switching transistor
MMBT3906 PNP switching transistor
MMBZ10VAL Low capacitance unidirectional double ESD protection diodes
MMBZ12VAL Low capacitance unidirectional double ESD protection diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MMBD4148 High-speed switching diode Rev. 01 — 4 June 2009 Product data sheet 1. Product profile 1.1 General description High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features I High switching speed: trr ≤ 4 ns I Low leakage current I Repetitive peak reverse voltage: VRRM ≤ 75 V 1.3 Applications I High-speed switching I General-purpose switching I Low capacitance I Reverse voltage: VR ≤ 75 V I Small SMD plastic package 1.4 Quick reference data Table 1. Symbol VR IR trr Quick reference data Parameter reverse voltage reverse current reverse recovery time Conditions VR = 75 V Min [1] - Typ - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. Max 75 0.5 4 Unit V µA ns 2.