MMBD4148 Datasheet PDF

FEATURES

I High switching speed: trr ≤ 4 ns I Low leakage current I Repetitive peak reverse voltage: VRRM ≤ 75 V 1.3

APPLICATIONS

I High-speed switching I General-purpose switching I Low capacitance I Reverse voltage: VR ≤ 75 V I Small SMD plastic package 1.4 Quick reference data Table 1. Symbol VR IR trr Quick reference data Parameter reverse voltage reverse current reverse recovery time Conditions VR = 75 V Min [1] - Typ - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. Max 75 0.5 4 Unit V µA ns 2. Pinning information Table 2. Pin 1 2 3 Pinning

DESCRIPTION

anode not connected cathode Simplified outline Graphic symbol 3 12 3 12 006aaa764 NXP Semiconductors MMBD4148 High-speed swit