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MMBZ20VAL

Manufacturer: NXP Semiconductors

This datasheet includes multiple variants, all published together in a single manufacturer document.

MMBZ20VAL datasheet preview

Datasheet Details

Part number MMBZ20VAL
Datasheet MMBZ20VAL MMBZ5V6AL Datasheet (PDF)
File Size 125.70 KB
Manufacturer NXP Semiconductors
Description Low capacitance unidirectional double ESD protection diodes
MMBZ20VAL page 2 MMBZ20VAL page 3

MMBZ20VAL Overview

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a mon anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines.

MMBZ20VAL Key Features

  • ESD protection up to 30 kV (contact
  • Bidirectional ESD protection of one line
  • IEC 61000-4-2; level 4 (ESD)
  • Low diode capacitance: Cd ≤ 280 pF
  • Rated peak pulse power: PPPM = 40 W
  • Ultra low leakage current: IRM = 5 nA
  • IEC 61643-321
  • AEC-Q101 qualified

MMBZ20VAL from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
ROHM Logo MMBZ20VAL Transient Voltage Suppressor ROHM
ON Logo MMBZ20VAL Transient Voltage Suppressors ON
nexperia Logo MMBZ20VAL ESD protection diode nexperia
Diodes Logo MMBZ20VAL 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS Diodes
SEMIWILL Logo MMBZ20VAL ElectroStatic Discharge Protection Devices SEMIWILL
NXP Semiconductors logo - Manufacturer

More Datasheets from NXP Semiconductors

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MMBZ20VCL Double ESD protection diodes
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MMBZ15VAL Low capacitance unidirectional double ESD protection diodes
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MMBZ18VAL Low capacitance unidirectional double ESD protection diodes
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MMBZ20VAL Distributor

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