MMBZ33VAL Datasheet | NXP Semiconductors

description Unidirectional double Electro Static Discharge (ESD) protection diodes in a mon anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines. Table 1. Product overview Type number Package MMBZ5V6AL SOT23 MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL JEDEC TO-236AB Configuration dual mon anode 1.2 Features - Unidirectional ESD protection of - ESD protection up to 30 k V (contact two lines discharge) - Bidirectional ESD protection of one line - IEC 61000-4-2; level 4 (ESD) - Low diode capacitance: Cd ≤ 280 p F - Rated peak pulse power: PPPM = 40 W - Ultra low leakage current: IRM = 5 n A - IEC 61643-321 - AEC-Q101 qualified 1.3 Applications - puters and peripherals - Audio and video equipment - Cellular handsets and accessories - Automotive electronic control units - Portable electronics NXP Semiconductors MMBZx AL series Low capacitance unidirectional double ESD protection diodes 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise...