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MMBZ9V1AL Datasheet

Manufacturer: NXP Semiconductors

This datasheet includes multiple variants, all published together in a single manufacturer document.

MMBZ9V1AL datasheet preview

Datasheet Details

Part number MMBZ9V1AL
Datasheet MMBZ9V1AL MMBZ5V6AL Datasheet (PDF)
File Size 125.70 KB
Manufacturer NXP Semiconductors
Description Low capacitance unidirectional double ESD protection diodes
MMBZ9V1AL page 2 MMBZ9V1AL page 3

MMBZ9V1AL Overview

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a mon anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines.

MMBZ9V1AL Key Features

  • ESD protection up to 30 kV (contact
  • Bidirectional ESD protection of one line
  • IEC 61000-4-2; level 4 (ESD)
  • Low diode capacitance: Cd ≤ 280 pF
  • Rated peak pulse power: PPPM = 40 W
  • Ultra low leakage current: IRM = 5 nA
  • IEC 61643-321
  • AEC-Q101 qualified

MMBZ9V1AL from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
nexperia Logo MMBZ9V1AL ESD protection diode nexperia
Diodes Logo MMBZ9V1AL 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS Diodes
SEMIWILL Logo MMBZ9V1AL ElectroStatic Discharge Protection Devices SEMIWILL
DIODES Logo MMBZ9V1ALAQ 24W AND 40W PEAK POWER DUAL SURFACE-MOUNT TVS DIODES
ROHM Logo MMBZ9V1ALFH Transient Voltage suppressor ROHM
NXP Semiconductors logo - Manufacturer

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