MMRF1022HS Overview
Freescale Semiconductor Technical Data Document Number: 0, 4/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2110 to 2170 MHz. This part is ideally suited for mercial and defense munications and electronic warfare applications, such as an IED...
MMRF1022HS Key Features
- Advanced high performance in--package Doherty
- Greater negative gate--source voltage range for improved Class C operation
- Designed for digital predistortion error correction systems
- 0.5, +65 -6.0, +10