MMRF1022HS
Key Features
- Advanced high performance in--package Doherty
- Greater negative gate--source voltage range for improved Class C operation
- Device cannot operate with the VDD current supplied through pin 3 and pin
- © Freescale Semiconductor, Inc
- All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF1022HS 1 Table
- Characteristic Symbol RθJC Value (2) 0.33 Unit °C/W Table
- Continuous use at maximum temperature will affect MTTF
- Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.nxp./RF and search for AN1955
- Each side of device measured separately. (continued) MMRF1022HS 2 RF Device Data Freescale Semiconductor, Inc
