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Freescale Semiconductor Technical Data
Document Number: MMRF1022HS Rev. 0, 4/2016
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2110 to 2170 MHz. This part is ideally suited for commercial and defense communications and electronic warfare applications, such as an IED jammer.
2100 MHz • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 500 mA, VGSB = 0.5 Vdc, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
ηD
Output PAR
ACPR
(%)
(dB)
(dBc)
2110 MHz
16.2
51.6
7.9
–28.5
2140 MHz
16.2
51.8
7.9
–28.8
2170 MHz
16.1
50.9
7.9
–29.
MMRF1022HS Datasheet
