Overview: Freescale Semiconductor Technical Data Document Number: MMRF1022HS Rev. 0, 4/2016 RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2110 to 2170 MHz. This part is ideally suited for mercial and defense munications and electronic warfare applications, such as an IED jammer. 2100 MHz • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 500 mA, VGSB = 0.5 Vdc, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 2110 MHz 16.2 51.6 7.9 –28.5 2140 MHz 16.2 51.8 7.9 –28.8 2170 MHz 16.1 50.9 7.9 –29.
