MMZ09332BT1 Datasheet PDF - NXP Heterojunction Bipolar Transistor Specs

MMZ09332BT1 - Heterojunction Bipolar Transistor

Datasheet Summary

Description

Part Number C1 6.8 pF Chip Capacitor GJM1555C1H6R8DB01ND C2 2.4 pF Chip Capacitor GJM1555C1H2R4DB01ND C3 220 pF Chip Capacitor GRM1555C1H221GA01ND C4 4.7 pF Chip Capacitor GJM1555C1H4R7DB01ND C5 8.2 pF Chip Capacitor GJM1555C1H8R2DB01ND C6, C7, C13 100 pF Chip Capacitors GRM1555C1

Features

Frequency: 130.
1000 MHz.
P1dB: 33 dBm, 450 to 1000 MHz.
OIP3: up to 48 dBm @ 900 MHz.
Excellent Linearity.
Active Bias Control (adjustable externally).
Single 3 to 5 V Supply.
Single--ended Power Detector.
Cost--effective 12--pin 3 mm QFN Surface Mount Plastic Package Power VBA1 VBA2 VBIAS Down VCC1 ACTIVE BIAS WITH POWER DOWN Document Number: MMZ09332B Rev. 0, 8/2015 MMZ09332BT1 130.
1000 MHz, 30 dB, 33 dBm InGaP HBT LINEAR.

Datasheet Details

Part number	MMZ09332BT1
Manufacturer	NXP
File Size	1.17 MB
Description	Heterojunction Bipolar Transistor
Datasheet	MMZ09332BT1 Datasheet
Additional preview pages of the MMZ09332BT1 datasheet.

📁 Similar Datasheet

MMZ09312BT1 - Heterojunction Bipolar Transistor (Freescale Semiconductor)

MMZ0603 - Chip Beads (TDK)

MMZ0603AFY560VT000 - EMC Components (TDK)

MMZ0603D330C - Chip Beads (TDK)

MMZ0603D560C - Chip Beads (TDK)

MMZ0603D800C - Chip Beads (TDK)

MMZ0603F100C - Chip Beads (TDK)

MMZ0603S100C - Chip Beads (TDK)

MMZ0603S121C - Chip Beads (TDK)

MMZ0603S241C - Chip Beads (TDK)

Full PDF Text Transcription

Click to expand full text

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.

Published: Jul 13, 2020 |