MMZ25332BT1 Datasheet PDF - NXP Heterojunction Bipolar Transistor Specs

MMZ25332BT1 - Heterojunction Bipolar Transistor

Datasheet Summary

Description

1 F Chip Capacitors Part Number GRM155R61A105KE15 C2, C5, C7, C8, C10, C11, C15 Components Not Placed C3 470 pF Chip Capacitor GRM1555C1H471JA01 C4 8.2 pF Chip Capacitor 04023J8R2BBS C6 4.7 F Chip Capacitor GRM188R60J475KE19D C9, C14 22 pF Chip Capacitors 04023J22R0BBS C13 3.3 pF

Features

Frequency: 1500.
2800 MHz.
P1dB: 33 dBm @ 2500 MHz.
Power gain: 26.5 dB @ 2500 MHz.
OIP3: 48 dBm @ 2500 MHz.
EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g).
Active bias control (adjustable externally).
Power down control via VBIAS pin.
Class 3A HBM ESD rating.
Single 3 to 5 V supply.
Single--ended power detector.
Cost--effective 12--pin, 3 mm QFN surface mount plastic package Table 1. Typical CW Performance (1) Characteristic 1800 2500.

Datasheet Details

Part number	MMZ25332BT1
Manufacturer	NXP
File Size	580.41 KB
Description	Heterojunction Bipolar Transistor
Datasheet	MMZ25332BT1 Datasheet
Additional preview pages of the MMZ25332BT1 datasheet.

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Full PDF Text Transcription

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NXP Semiconductors Technical Data Document Number: MMZ25332B Rev. 3, 11/2017 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 22 dBm, covering frequencies from 1500 to 2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount QFN 3  3 package.

Published: Jul 13, 2020 |