Part MMZ25332BT1
Description Heterojunction Bipolar Transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 580.41 KB
NXP Semiconductors

MMZ25332BT1 Overview

Key Features

  • Frequency: 1500–2800 MHz
  • P1dB: 33 dBm @ 2500 MHz
  • Power gain: 26.5 dB @ 2500 MHz
  • OIP3: 48 dBm @ 2500 MHz
  • EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
  • Active bias control (adjustable externally)
  • Power down control via VBIAS pin
  • Class 3A HBM ESD rating
  • Single 3 to 5 V supply
  • Single--ended power detector