MMZ25332BT1 Description
NXP Semiconductors Technical Data Document Number: 3, 11/2017 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an...
MMZ25332BT1 Key Features
- Frequency: 1500-2800 MHz
- P1dB: 33 dBm @ 2500 MHz
- Power gain: 26.5 dB @ 2500 MHz
- OIP3: 48 dBm @ 2500 MHz
- EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
- Active bias control (adjustable externally)
- Power down control via VBIAS pin
- Class 3A HBM ESD rating
- Single 3 to 5 V supply
- Single--ended power detector