MMZ25332BT1 - Heterojunction Bipolar Transistor

1 F Chip Capacitors Part Number GRM155R61A105KE15 C2, C5, C7, C8, C10, C11, C15 Components Not Placed C3 470 pF Chip Capacitor GRM1555C1H471JA01 C4 8.2 pF Chip Capacitor 04023J8R2BBS C6 4.7 F Chip Capacitor GRM188R60J475KE19D C9, C14 22 pF Chip Capacitors 04023J22R0BBS C13 3.3 pF

• Frequency: 1500.
• 2800 MHz.
• P1dB: 33 dBm @ 2500 MHz.
• Power gain: 26.5 dB @ 2500 MHz.
• OIP3: 48 dBm @ 2500 MHz.
• EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g).
• Active bias control (adjustable externally).
• Power down control via VBIAS pin.
• Class 3A HBM ESD rating.
• Single 3 to 5 V supply.
• Single--ended power detector.
• Cost--effective 12--pin, 3 mm QFN surface mount plastic package Table 1. Typical CW Performance (1) Characteristic 1800 2500.