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MMZ25333B Datasheet

Manufacturer: NXP Semiconductors
MMZ25333B datasheet preview

Datasheet Details

Part number MMZ25333B
Datasheet MMZ25333B-NXP.pdf
File Size 348.51 KB
Manufacturer NXP Semiconductors
Description InGaP HBT Linear Amplifier
MMZ25333B page 2 MMZ25333B page 3

MMZ25333B Overview

The MMZ25333B is a versatile 3−stage power amplifier targeted at driver and pre−driver applications for macro and micro base stations and final−stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 40 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for...

MMZ25333B Key Features

  • P1dB: up to 33 dBm
  • Gain: More than 40 dB
  • 5 V Supply
  • Excellent Linearity
  • High Efficiency
  • Single-ended Power Detector
  • Band Tunable
  • 4 April 2024
  • Output Return Loss (S22)
  • Power Output @ 1dB pression

MMZ25333B Applications

  • P1dB: up to 33 dBm
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MMZ25333B Distributor

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