Part MMZ25333B
Description InGaP HBT Linear Amplifier
Manufacturer NXP Semiconductors
Size 348.51 KB
NXP Semiconductors

MMZ25333B Overview

Description

The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 40 dB.

Key Features

  • P1dB: up to 33 dBm
  • Gain: More than 40 dB
  • Excellent Linearity
  • High Efficiency
  • Single-ended Power Detector
  • Functional VBA1 VBA2 VBIAS