• Part: MMZ27333BT1
  • Description: High Gain Power Amplifier
  • Manufacturer: NXP Semiconductors
  • Size: 1.08 MB
MMZ27333BT1 Datasheet (PDF) Download
NXP Semiconductors
MMZ27333BT1

Key Features

  • P1dB: up to 33 dBm
  • Gain: More than 35 dB
  • Excellent Linearity
  • High Efficiency
  • Single--ended Power Detector
  • Band Tunable
  • Functional © 2016-2017 NXP B.V. RF Device Data NXP Semiconductors MMZ27333BT1 1 Table
  • Rating Symbol Value Unit Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature Table