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MMZ38333BT1 - 3.8 GHz Linear Power Amplifier and BTS Driver

Datasheet Summary

Description

Part Number C1, C4, C5, C6 5.6 pF Chip Capacitor 04023J5R6BBW C2 2 pF Chip Capacitor 04023J2R0BBW C3 0.6 pF Chip Capacitor 04023J0R6BBW C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 C10 470 pF Chip Capacitor GRM1555C1H471JA01

Features

  • Frequency: 3400.
  • 3800 MHz.
  • P1dB: 31.7 dBm @ 3600 MHz.
  • Power gain: 37 dB @ 3600 MHz.
  • Active bias control (adjustable externally).
  • Power down control via VBIAS.
  • 5 volt supply.
  • Cost--effective 24--pin, 4 mm QFN surface mount plastic package VCC1/ RFout1 RFin2 VCC2 PDET RFin1 BIAS.

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Datasheet Details

Part number MMZ38333BT1
Manufacturer NXP
File Size 1.38 MB
Description 3.8 GHz Linear Power Amplifier and BTS Driver
Datasheet download datasheet MMZ38333BT1 Datasheet
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NXP Semiconductors Technical Data 3.8 GHz Linear Power Amplifier and BTS Driver High Efficiency/Linearity Amplifier The MMZ38333B is a 3--stage high linearity InGaP HBT broadband amplifier designed for small cells and LTE base stations. It provides exceptional linearity for LTE air interface with an ACPR of –48 dBc at an output power greater than 22.3 dBm, covering frequencies from 3400 to 3800 MHz. It operates off a 5 V supply voltage. The amplifier is internally pre--matched with the flexibility to change external matching to suit the final application and offers state--of--the-art reliability, ruggedness, temperature stability and ESD performance.
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