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MMZ38333BT1 Datasheet

Manufacturer: NXP Semiconductors
MMZ38333BT1 datasheet preview

Datasheet Details

Part number MMZ38333BT1
Datasheet MMZ38333BT1-NXP.pdf
File Size 1.38 MB
Manufacturer NXP Semiconductors
Description 3.8 GHz Linear Power Amplifier and BTS Driver
MMZ38333BT1 page 2 MMZ38333BT1 page 3

MMZ38333BT1 Overview

NXP Semiconductors Technical Data 3.8 GHz Linear Power Amplifier and BTS Driver High Efficiency/Linearity Amplifier The MMZ38333B is a 3--stage high linearity InGaP HBT broadband amplifier designed for small cells and LTE base stations. It provides exceptional linearity for LTE air interface with an ACPR of 48 dBc at an output power greater than 22.3 dBm, covering frequencies from 3400 to 3800 MHz. It operates off a...

MMZ38333BT1 Key Features

  • Frequency: 3400-3800 MHz
  • P1dB: 31.7 dBm @ 3600 MHz
  • Power gain: 37 dB @ 3600 MHz
  • Active bias control (adjustable externally)
  • Power down control via VBIAS
  • 5 volt supply
  • Cost--effective 24--pin, 4 mm QFN surface mount plastic package
  • 65 to +150
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MMZ38333BT1 Distributor

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