MRF18060BLSR3 Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
MRF18060BLSR3 Key Features
- Internally Matched for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
MRF18060BLSR3 Applications
- PCS/cellular radio and WLL applications. Specified for GSM 1930