Overview: NXP Semiconductors Technical Data RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 27 81.36 (1) 87.5–108 (2,3) 230 (4) CW CW CW Pulse (100 µsec, 20% Duty Cycle) 1550 CW 1400 CW 1475 CW 1500 Peak 25.9 23.0 23.3 23.7 78.3 75.0 83.4 74.0 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage Result 230 (4) Pulse > 65:1 at all 13 Peak 50 No Device (100 µsec, 20% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) 1. Data from 81.36 MHz narrowband reference circuit (page 11). 2. Data from 87.5–108 MHz broadband reference circuit (page 5). 3. The values shown are the center band performance numbers across the indicated
frequency range. 4. Data from 230 MHz narrowband production test fixture (page 16).
