MRF1K50H Description
NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Data...
MRF1K50H Key Features
- High drain--source avalanche energy absorption capability
- Unmatched input and output allowing wide frequency range utilization
- Device can be used single--ended or in a push--pull configuration
- Characterized from 30 to 50 V for ease of use
- Suitable for linear application
- Integrated ESD protection with greater negative gate--source voltage range
- Remended driver: MRFE6VS25N (25 W)
- Lower thermal resistance part available: MRF1K50N
- Included in NXP product longevity program with assured supply for a