MRF300AN Overview
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed for use in HF and VHF munications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. Measured in 13.56 MHz reference circuit (page 5).
MRF300AN Key Features
- Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration
- Characterized from 30 to 50 V
- Suitable for linear application
- Integrated ESD protection with greater negative gate--source
- Included in NXP product longevity program with assured