MRF300AN
Features
- Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration
- Characterized from 30 to 50 V
- Suitable for linear application
- Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
- Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
Typical Applications
- Industrial, scientific, medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding and drying systems
- Radio and VHF TV broadcast
- HF and VHF munications
- Switch mode power supplies
2018- 2019 NXP B.V.
RF Device Data NXP Semiconductors
Document Number: MRF300AN Rev. 2, 06/2019
MRF300AN MRF300BN
1.8- 250 MHz, 300 W CW, 50 V WIDEBAND
RF POWER LDMOS TRANSISTORS
G S D TO--247--3 MRF300AN
D S G TO--247--3 MRF300BN
Backside Note: Exposed backside of the package also serves as a source terminal for...
