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MRF300AN - RF Power LDMOS Transistors

Key Features

  • D G.
  • Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration S.
  • Characterized from 30 to 50 V.
  • Suitable for linear.

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Other Datasheets by NXP Semiconductors

Part Number Description
MRF300BN RF Power LDMOS Transistors
MRF377 RF Power Field-Effect Transistor
MRF377R3 RF Power Field-Effect Transistor
MRF377R5 RF Power Field-Effect Transistor
MRF101AN RF Power LDMOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 13.56 (1) 27 (2) 40.68 (3) 50 (4) 81.36 (5) 144 (6) 230 (7) CW Pulse (100 sec, 20% Duty Cycle) 320 CW 330 CW 330 CW 320 CW 325 CW 320 CW 330 Peak 28.1 27.4 28.2 27.3 25.1 23.0 20.4 79.7 80.0 79.0 73.0 77.5 73.0 75.5 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage Result 40.