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MRF377R3 - RF Power Field-Effect Transistor

Download the MRF377R3 datasheet PDF. This datasheet also covers the MRF377 variant, as both devices belong to the same rf power field-effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF377-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts, IDQO=u2tp.0utAP,o8wKeMr —ode4,56W4 aQttAsMAvg. Power Gain ≥ 16.7 dB Efficiency ≥ 21% ACPR ≤ - 58 dBc • Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts, IDQO=u2tp.0utAPower — 80 Watts Avg. Power Gain ≥ 16.5 dB Efficiency ≥ 27.